WANG Jing-yu, ZUO Chang-ming, JI Hong

(State Key Laboraory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu 610054, China)

Abstract: Pt/Ti electrode thin films on Si (100) substrate were prepared by the DC magnetron sputtering at room temperature. Films treated at different temperatures were investigated using X-ray diffraction and atomic force microscopic methods. The effects of annealing temperature on Pt/Ti bilayer bottom electrode stress were dicussed.It is found that a comperssive stress of Pt layer is formed at the initial stage of anealing, so that protruded mounds are formed on the surface of the Pt layer .The thermal stress produced in the annealing process dominates the formaton of the residual stress of Pt layer.Such thermal stress makes the final stress state of Pt layer the tensile stress, and the tensile stress increases with the increase of Pt₃Ti intermetallic compounds in the Pt layer.

Key words: Pt/Ti electrode;X-ray diffraction; stress

E-mail: jingyuwang2008@163.com

Analysis and Testing Technology and Instruments, Vol. 16, No. 3, 2010, 162-165.