WANG Xue-rong, WEI Li-ping, ZHENG Hui-bao,LIU Yun-chuan, MENG Xiang-yan, ZHOU Yan-ping
(Institute No. 53 of China North Industries Group Corporation, Jinan 250031, China)
Abstract: An AlxGa1-xN film with a Al content of 0.63 was grown on the sapphire substrate by the metal-organic chemical vapor deposition. High resolution x-ray diffraction method can used to measure the crystal lattice constant of the AlxGa1-xN film. The lattice constant of the AlxGa1 -xN film can be accurately determined by the ω/2θ scan of the symmetric crystal plane and asymmetric crystal plane and also by the correction of the zero error and distance of crystal planes. The result showed that the level lattice constant of Al0.63Ga0.37N is 0.505 96 nm,and the vertical lattice constant is 0.313 01 nm. Through the analysis and correction of various effects, the obtained measurement deviations are 0.000 1 nm and 0.000 2 nm,respectively.
Key words: A1GaN; high resolution x-ray diffraction; lattice constant; measurement error
E-mail: wangxuerong19851228@126.com
Analysis and Testing Technology and Instruments, Vol. 16, No. 3, 2010, 152-156.
